▎ 摘　　要

This paper presents a SPICE-like graphene field-effect transistor (GFET) model with an improved carrier mobility analysis. The model considers the mobility difference between the electrons and the holes in graphene, as well as the mobility variation against the carrier density. Closed-form analytical solutions have been derived, and the model has been implemented in Verilog-A language. This was compiled into an advanced design system. The proposed model gives excellent agreement between the simulation results and the measurement data for both the hole and electron conduction simultaneously. The model is suitable for the exploration of GFET-based applications, especially for those using the ambipolar transfer property of GFET.