• 文献标题:   Influence of self-assembled monolayer binding group on graphene transistors
  • 文献类型:   Article
  • 作  者:   CERNETIC N, HUTCHINS DO, MA H, JEN AKY
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Washington
  • 被引频次:   6
  • DOI:   10.1063/1.4905595
  • 出版年:   2015

▎ 摘  要

Graphene transistors on self-assembled monolayer (SAM) modified dielectric substrates were fabricated and characterized in order to determine the influence SAM binding group has on device properties. It was found that silane based alkyl SAMs had little to no influence in doping graphene transistors, while phosphonic acid based ones caused n-type doping of graphene transistors with a charge neutrality point shift of over 10 V. It was also discovered that alkyl SAM packing density influenced the doping magnitude. Due to substrate surface charge trap quenching, these SAMs independent of binding group enhanced charge mobility of graphene transistors compared to ones on bare oxide substrates. (C) 2015 AIP Publishing LLC.