▎ 摘　　要

A UV detector was fabricated based on vertical TiO2 nanowires (NWs) grown over spin-coated graphene oxide (GO) thin film (TF) using glancing angle deposition technique. A small dark current (0.0254 mu A/cm(2) at 4 V) was observed for the Au/TiO2 NW/GO TF/Si device. Interface trap charges played a significant role in high photocurrent under 380 nm light illumination, which leads to high trap-assisted tunneling. The modified band bending at higher energy light illumination of 300 nm opposed the carrier to tunnel through the junction and forced to decrease the current. Variation in photocapacitance was obtained, which verified the presence of interface trap charges. A high responsivity of 48.3 mA/W and also photosensitivity and detectivity of 82.7 and 2.26 x 10(11) Jones, respectively, were measured under 380 nm (113.8 mu W/cm(2)) illumination. A high rise time (48 ms) and fall time (40 ms) due to efficient charge separation between the TiO2 and the GO device are reported.