• 文献标题:   Electron transport and Goos-Hanchen shift in graphene with electric and magnetic barriers: optical analogy and band structure
  • 文献类型:   Article
  • 作  者:   SHARMA M, GHOSH S
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Indian Inst Technol Delhi
  • 被引频次:   63
  • DOI:   10.1088/0953-8984/23/5/055501
  • 出版年:   2011

▎ 摘  要

Transport of massless Dirac fermions in graphene monolayers is analysed in the presence of a combination of singular magnetic barriers and applied electrostatic potential. Extending a recently proposed (Ghosh and Sharma 2009 J. Phys.: Condens. Matter 21 292204) analogy between the transmission of light through a medium with modulated refractive index and electron transmission in graphene through singular magnetic barriers to the present case, we find the addition of a scalar potential profoundly changes the transmission. We calculate the quantum version of the Goos-Hanchen shift that the electron wave suffers upon being totally reflected by such barriers. The combined electric and magnetic barriers substantially modify the band structure near the Dirac point. This affects transport near the Dirac point significantly and has important consequences for graphene-based electronics.