• 文献标题:   Sensor Properties of Field-Effect Transistors Based on Graphene Oxide and Nafion Films with Proton Conductivity
  • 文献类型:   Article
  • 作  者:   SMIRNOV VA, MOKRUSHIN AD, DENISOV NN, DOBROVOLSKY YA
  • 作者关键词:   graphene oxide, nafion, proton conductivity, fieldeffect transistor
  • 出版物名称:   RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A
  • ISSN:   0036-0244 EI 1531-863X
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   0
  • DOI:   10.1134/S0036024418070269
  • 出版年:   2018

▎ 摘  要

The proton conductivity of graphene oxide (GO) and Nafion films was studied depending on the humidity and voltage on electrodes. The electric properties of the films were similar, but the mobility of positive charges in Nafion was approximately two orders of magnitude higher than in GO. In GO films, the negative ion current with a positive voltage bias was up to similar to 10% of the proton current, while in Nafion films it was almost absent (< 1%). The sensors based on GO and Nafion films were most effective at humidity (RH) in the range 20-80%.