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- 文献标题: Graphene/Si-Quantum-Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect
- 文献类型: Article
- 作 者: SHIN DH, KIM S, KIM JM, JANG CW, KIM JH, LEE KW, KIM J, OH SD, LEE DH, KANG SS, KIM CO, CHOI SH, KIM KJ
- 作者关键词: graphene, si quantum dot, photodetector, quantum confinement effect, heterojunction diode
- 出版物名称: ADVANCED MATERIALS
- ISSN: 0935-9648 EI 1521-4095
- 通讯作者地址: Kyung Hee Univ
- 被引频次: 34
- DOI: 10.1002/adma.201500040
- 出版年: 2015
