• 文献标题:   Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction
  • 文献类型:   Article
  • 作  者:   LI J, TAN LZ, ZOU K, STABILE AA, SEIWELL DJ, WATANABE K, TANIGUCHI T, LOUIE SG, ZHU J
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Penn State Univ
  • 被引频次:   8
  • DOI:   10.1103/PhysRevB.94.161406
  • 出版年:   2016

▎ 摘  要

In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi-liquid parameters, such as the effective mass of carriers. We combine experiment and theory to study the effective masses of electrons and holes m(e)(*) and m(h)(*) in bilayer graphene in the low carrier density regime on the order of 1 x 10(11) cm(-2). Measurements use temperature-dependent low-field Shubnikov-de Haas oscillations observed in high-mobility hexagonal boron nitride supported samples. We find that while m(e)(*) follows a tight-binding description in the whole density range, m(h)(*) starts to drop rapidly below the tight-binding description at a carrier density of n = 6 x 10(11) cm(-2) and exhibits a strong suppression of 30% when n reaches 2 x 10(11) cm(-2). Contributions from the electron-electron interaction alone, evaluated using several different approximations, cannot explain the experimental trend. Instead, the effect of the potential fluctuation and the resulting electron-hole puddles play a crucial role. Calculations including both the electron-electron interaction and disorder effects explain the experimental data qualitatively and quantitatively. This Rapid Communication reveals an unusual disorder effect unique to two-dimensional semimetallic systems.