• 文献标题:   Temperature-dependent nitrogen configuration of N-doped graphene by chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   SUI YP, ZHU B, ZHANG HR, SHU HB, CHEN ZY, ZHANG YH, ZHANG YQ, WANG B, TANG CM, XIE XM, YU GH, JIN Z, LIU XY
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   16
  • DOI:   10.1016/j.carbon.2014.10.030
  • 出版年:   2015

▎ 摘  要

The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ray photoelectron spectroscopy (XPS) showed a significant linear blueshift as the temperature decreased, indicating that the main doping nitrogen configuration gradually evolved from pyridinic N to pyrrolic N consistent with the theoretical explanation. In addition, the nitrogen configuration was not influenced by the NH3 flow rate, which was mainly pyridinic N at the high temperature. With increasing NH3 flow rate the redshift of the Raman peak was caused by the elongation of the C-C bonds. This work presented a process to control the predominant bonding configuration of doping nitrogen by mainly choosing the growth temperature through CVD. (C) 2014 Elsevier Ltd. All rights reserved.