• 文献标题:   Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes
  • 文献类型:   Article
  • 作  者:   KWON SJ, HAN TH, KIM YH, AHMED T, SEO HK, KIM H, KIM DJ, XU W, HONG BH, ZHU JX, LEE TW
  • 作者关键词:   cvd graphene, chemical ndoping, transparent electrode, dft calculation, pled
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   7
  • DOI:   10.1021/acsami.7b15307
  • 出版年:   2018

▎ 摘  要

n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by similar to 0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (similar to 3.8 cd/A) than did inverted PLEDs with pristine graphene (similar to 2.74 cd/A). N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.