▎ 摘　　要

Combining the features of graphene, spintronics and superlattices, this study reports huge tunnel magnetoresistance achieved using graphene-based magnetic tunnel junctions with superlattice barriers. Our calculation results show that the tunnel magnetoresistance of as much as 10(7)% is obtained using a magnetic tunnel junction with a six-cell superlattice barrier. This magnetoresistance increases as the number of cells in the superlattice barrier increases. This remarkable value can be linked to the artificially tailored band structures of the superlattice barriers. This generic nature provides new opportunities for other spintronics applications, using graphene superlattices.