• 文献标题:   Engineering of Numerous Moire Superlattices in Twisted Multilayer Graphene for Twistronics and Straintronics Applications
  • 文献类型:   Article
  • 作  者:   BRZHEZINSKAYA M, KONONENKO O, MATVEEV V, ZOTOV A, KHODOS II, LEVASHOV V, VOLKOV V, BOZHKO SI, CHEKMAZOV SV, ROSHCHUPKIN D
  • 作者关键词:   moire material, twisted multilayer graphene tmlg, twistronic, stm, big data application, transport propertie, 2d nanoelectronic
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:  
  • 被引频次:   26
  • DOI:   10.1021/acsnano.1c04286 EA JUL 2021
  • 出版年:   2021

▎ 摘  要

Because of their unique atomic structure, 2D materials are able to create an up-to-date paradigm in fundamental science and technology on the way to engineering the band structure and electronic properties of materials on the nanoscale. One of the simplest methods along this path is the superposition of several 2D nanomaterials while simultaneously specifying the twist angle between adjacent layers (theta), which leads to the emergence of Moire superlattices. The key challenge in 2D nanoelectronics is to obtain a nanomaterial with numerous Moire superlattices in addition to a high carrier mobility in a stable and easy-to-fabricate material. Here, we demonstrate the possibility of synthesizing twisted multilayer graphene (tMLG) with a number of monolayers N-L = 40-250 and predefined narrow ranges of theta = 3-8 degrees, theta = 11-15 degrees, and theta = 26-30 degrees. A 2D nature of the electron transport is observed in the tMLG, and its carrier mobilities are close to those of twisted bilayer graphene (tBLG) (with. = 30 degrees) between h-BN layers. We demonstrate an undoubtful presence of numerous Moire superlattices simultaneously throughout the entire tMLG thickness, while the periods of these superlattices are rather close to each other. This offers a challenge of producing a next generation of devices for nanoelectronics, twistronics, and neuromorphic computing for large data applications.