▎ 摘　　要

Fabrication and characterization of graphene flakes sandwiched polymethyl methacrylate (PMMA) hybrid bistable devices (HBD) is reported in this paper. Graphene flakes (GFs) sandwiched polymer layers were prepared through a simple solution process. The fabricated memory devices have exhibited remarkable electrical bistable behavior even at 150 degrees C. Bistable memory behavior of the fabricated devices have been described on the basis of current-voltage characteristics. Reasonably good ON/OFF current ratio (similar to 10(3)) and retention property have been obtained from the constructed memory devices. The device showed excellent stability up to 10(5) switching cycles without any degradation both in ON and OFF states. The results obtained have indicated that the HBD fabricated by embedding gaphene flakes in an insulating polymer matrix have potential applications in organic nonvolatile flash memory devices.