• 文献标题:   Conductance of disordered graphene sheets: A real space approach
  • 文献类型:   Article
  • 作  者:   CHOWDHURY S, JANA D, MOOKERJEE A
  • 作者关键词:   graphene, extended disordered defect, transport property, real space recursion method
  • 出版物名称:   PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
  • ISSN:   1386-9477 EI 1873-1759
  • 通讯作者地址:   Univ Calcutta
  • 被引频次:   7
  • DOI:   10.1016/j.physe.2015.07.019
  • 出版年:   2015

▎ 摘  要

In this work the conducting properties of graphenc lattice (buckled as well as planar) having different concentrations of defects are studied with the help of real space block recursion method introduced by Haydock et al. Since the defects are completely random, reciprocal space based methods which need artificial periodicity are not applicable here. Different resonant states appear because of the presence of topological and local defects which are calculated within the framework of Green function. Except random voids, in all other density of states (DOS) spectra there arc signatures of Breit-Wigner and Farmo resonance at occupied and unoccupied regime respectively. Although Fano resonance states are not prominent for graphene with random voids, however Stone-Wales (SW) type detect can naturally introduce their resonance states. The appearance or localized states depends strongly On the concentration of defects. (C) 2015 Elsevier B.V. All rights reserved.