• 文献标题:   Manipulation of electrical properties in CVD-grown twisted bilayer graphene induced by dissociative hydrogen adsorption
  • 文献类型:   Article
  • 作  者:   HONG SJ, PARK M, KANG H, LEE M, SOLERDELGADO D, JEONG DH, PARK YW, KIM BH
  • 作者关键词:   hydrogenation, twisted bilayer graphene, firstorder adsorption, electron doping, bandgap opening
  • 出版物名称:   CURRENT APPLIED PHYSICS
  • ISSN:   1567-1739 EI 1878-1675
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   2
  • DOI:   10.1016/j.cap.2016.09.019
  • 出版年:   2016

▎ 摘  要

We report hydrogen adsorption on twisted bilayer graphene (tBLG). Raman spectroscopy and the electrical transport properties (electrical resistance and thermoelectric power) confirm the electron doping by hydrogen adsorption, in agreement with the previous report involving exfoliated bilayer graphene (BLG). Common electron doping behaviors were observed at various twist angles (0 degrees, 5 degrees, 12.5 degrees, and 30 degrees), and the adsorptions follow the first-order Langmuir-type adsorption model. Specifically, we analyzed the off-state currents, with band-gap openings of around 13 meV in tBLG with twist angle of 0 degrees, as in Bernal-stacked BLG. (C) 2016 Elsevier B.V. All rights reserved.