• 文献标题:   Centimeter-Scale High-Resolution Metrology of Entire CVD-Grown Graphene Sheets
  • 文献类型:   Article
  • 作  者:   KYLE JR, GUVENC A, WANG W, GHAZINEJAD M, LIN J, GUO SR, OZKAN CS, OZKAN M
  • 作者关键词:  
  • 出版物名称:   SMALL
  • ISSN:   1613-6810 EI 1613-6829
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   23
  • DOI:   10.1002/smll.201100263
  • 出版年:   2011

▎ 摘  要

A high-throughput metrology method for measuring the thickness and uniformity of entire large-area chemical vapor deposition-grown graphene sheets on arbitrary substrates is demonstrated. This method utilizes the quenching of fluorescence by graphene via resonant energy transfer to increase the visibility of graphene on a glass substrate. Fluorescence quenching is visualized by spin-coating a solution of polymer mixed with fluorescent dye onto the graphene then viewing the sample under a fluorescence microscope. A large-area fluorescence montage image of the dyed graphene sample is collected and processed to identify the graphene and indicate the graphene layer thickness throughout the entire graphene sample. Using this metrology method, the effect of different transfer techniques on the quality of the graphene sheet is studied. It is shown that small-area characterization is insufficient to truly evaluate the effect of the transfer technique on the graphene sample. The results indicate that introducing a drop of acetone or liquid poly(methyl methacrylate) (PMMA) on top of the transfer PMMA layer before soaking the graphene sample in acetone improves the quality of the graphene dramatically over immediately soaking the graphene in acetone. This work introduces a new method for graphene quantification that can quickly and easily identify graphene layers in a large area on arbitrary substrates. This metrology technique is well suited for many industrial applications due to its repeatability and flexibility.