▎ 摘　　要

We developed a Joule heating decomposition (JHD) method, which applied direct current on the SiC for the epitaxial growth of multi-layer graphene (MLG) films on Si-terminated (0001) face of the high doping 4H-SiC substrate. By this JHD method, the growth time for preparing MLG was only several minutes. Raman spectroscopy was employed to study the influence of the temperature caused by the Joule heating on the quality and the uniformity of the sample. Then, other properties, such as the strain, the layer's number, and the electric characteristics, of the MLG were studied in details. It was found that the quality of the MLG was substantially dependent on the growth temperature (operation current) and the growth time, while the layer's number was only dependent on the growth temperature but not the growth time. Finally, less-defect and homogeneous MLG (similar to 45 layers) with an area of similar to 12 x 5 mm(2) could be obtained at a heating temperature of similar to 1470 degrees C with duration time of 5 min. By using the linear transmission line method, the specific contact resistance of Au and MLG was 5.03 x 10(-5) Omega cm(2), and the sheet resistance was 52.36 Omega/sq, respectively.