▎ 摘　　要

Charge-trapping memory devices based on two-dimensional (2D) material heterostructures possess an atomically thin structure and excellent charge transport capability, making them promising candidates for next-generation flash memories to achieve miniaturized size, high storage capacity, fast switch speed, and low power consumption. Here, we report a nonvolatile floating-gate memory device based on an ReS2/boron nitride/graphene heterostructure. The implemented ReS(2)memory device displays a large memory window exceeding 100 V, leading to an ultrahigh current ratio over 10(8)between programming and erasing states. The ReS(2)memory device also exhibits an ultrafast switch speed of 1 mu s. In addition, the device can endure hundreds of switching cycles and shows stable retention characteristics with similar to 40% charge remaining after 10 years. More importantly, taking advantage of its anisotropic electrical properties, a single ReS(2)flake can achieve direction-sensitive multi-level data storage to enhance the data storage density. On the basis of these characteristics, the proposed ReS(2)memory device is potentially able to serve the entire memory device hierarchy, meeting the need for scalability, capacity, speed, retention, and endurance at each level.