• 文献标题:   Monte Carlo simulation study of spin transport in trilayer graphene: A comparison between ABA and ABC stacking
  • 文献类型:   Article
  • 作  者:   GHOSH B, MISRA S
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Indian Inst Technol
  • 被引频次:   1
  • DOI:   10.1063/1.4757948
  • 出版年:   2012

▎ 摘  要

In this work, we have used semi-classical Monte Carlo simulations to model spin transport in trilayer graphene (TLG) with ABA as well as ABC stacking. We have taken into consideration both the D'yakonov-Perel (DP) and Elliot-Yafet (EY) mechanisms of spin relaxation for modeling purposes. The two different stacking orders, ABA and ABC, have different band-structures, and we have studied the effect of the change in band structure on spin transport. Further, we have compared these results with bilayer graphene and single layer graphene and tried to explain the differences in the spin relaxation lengths in terms of band structure. We observe that TLG with ABC stacking exhibits a significantly higher spin relaxation length than TLG with ABA stacking. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757948]