▎ 摘　　要

Chemical vapor deposition (CVD) is the most effective method for the synthesis of large-scale and high-quality graphene. However, the growth temperature of graphene is high, about 1 000 degrees C, using conventional CVD, meaning that it is expensive and thus limits the use of the material. The synthesis of CVD graphene at low temperatures (<600 degrees C) is therefore the focus of many researchers. Recent research on the production of CVD graphene at low temperatures is reviewed. Comprehensive comparison, analysis and discussion of quality, number of layers, domain size and the uses of graphene synthesized at low temperatures using different precursors (gas, liquid and solids) and substrates (metals, metal alloys and dielectric materials) are given for different CVD methods (atmospheric pressure CVD, plasma enhanced CVD, catalyst-enhanced CVD, surface wave plasma CVD, microwave plasma CVD, radio frequency plasma enhanced CVD and electron cyclotron resonance CVD). The future prospects and challenges of preparing graphene at low temperatures are discussed.