▎ 摘　　要

We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultrahigh vacuum at low temperature. Charged impurity scattering gives a conductivity which is supralinear in carrier density with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10(12) cm(-2). Upon addition of charged impurities of concentration n(imp), the minimum conductivity sigma(min) decreases proportional to n(imp)(-1/2) while the electron and hole puddle carrier density increases proportional to n(imp)(1/2). These results for the intentional deposition of potassium on BLG are consistent with theoretical predictions for charged impurity scattering assuming a gapless hyperbolic dispersion relation. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO(2) before potassium doping.