• 文献标题:   Studies on contact resistance in graphene based devices
  • 文献类型:   Article
  • 作  者:   LIANG C, WANG YL, LI T
  • 作者关键词:  
  • 出版物名称:   MICROSYSTEM TECHNOLOGIESMICROAND NANOSYSTEMSINFORMATION STORAGE PROCESSING SYSTEMS
  • ISSN:   0946-7076 EI 1432-1858
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   1
  • DOI:   10.1007/s00542-015-2616-2
  • 出版年:   2016

▎ 摘  要

Contact resistance is an important limiting factor for the on-state current of graphene based devices. In this paper, both transmission line method and four-probe method are applied to measure the contact resistance in graphene-metal (Cr/Au and Ti/Au) interface. The calculated contact resistivity values by both methods are concentrated at 10(4) Omega mu m(2). These two methods are compared and four-probe method showed higher stability. At last, the graphene-Ti/Au devices are annealed at 400 A degrees C with argon and hydrogen gas flow. After annealing, the contact resistivity values are reduced to 10(3) Omega mu m(2).