• 文献标题:   The effects of electronic field on the atomic structure of the graphene/alpha-SiO2 interface
  • 文献类型:   Article
  • 作  者:   AO ZM, ZHENG WT, JIANG Q
  • 作者关键词:  
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484
  • 通讯作者地址:   Jilin Univ
  • 被引频次:   22
  • DOI:   10.1088/0957-4484/19/27/275710
  • 出版年:   2008

▎ 摘  要

The atomic structure of the graphene/alpha-SiO2(0001) interface under electric field F with different intensities is studied using the density functional theory method. Simulation results indicate that the atomic structure of the graphene/alpha-SiO2(0001) interface has only a slight change under the condition of F