• 文献标题:   Critical exponents of the semimetal-insulator transition in graphene: A Monte Carlo study
  • 文献类型:   Article
  • 作  者:   DRUT JE, LAHDE TA
  • 作者关键词:   carrier density, chiral symmetrie, critical exponent, graphene, metalinsulator transition, monte carlo method, quasiparticle
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Ohio State Univ
  • 被引频次:   60
  • DOI:   10.1103/PhysRevB.79.241405
  • 出版年:   2009

▎ 摘  要

The low-energy theory of graphene exhibits spontaneous chiral symmetry breaking due to pairing of quasiparticles and holes, corresponding to a semimetal-insulator transition at strong Coulomb coupling. We report a lattice Monte Carlo study of the critical exponents of this transition as a function of the number of Dirac flavors N-f, finding delta=1.25 +/- 0.05 for N-f=0, delta=2.26 +/- 0.06 for N-f=2 and delta=2.62 +/- 0.11 for N-f=4, with gamma similar or equal to 1 throughout. We compare our results with recent analytical work for graphene and closely related systems and discuss scenarios for the fate of the chiral transition at finite temperature and carrier density, an issue of relevance for upcoming experiments with suspended graphene samples.