• 文献标题:   Effect of doping and vacancy defects on the adsorption of CO on graphene
  • 文献类型:   Article
  • 作  者:   JIA XT, ZHANG H, ZHANG ZM, AN LB
  • 作者关键词:   graphene, mn doping, vacancy defect, adsorption of co, the first principle
  • 出版物名称:   MATERIALS CHEMISTRY PHYSICS
  • ISSN:   0254-0584 EI 1879-3312
  • 通讯作者地址:   North China Univ Sci Technol
  • 被引频次:   1
  • DOI:   10.1016/j.matchemphys.2020.123114
  • 出版年:   2020

▎ 摘  要

The adsorption behavior of CO molecules on graphene has been computationally studied by using the first principles method. Results show that only weak physical adsorption is formed between CO and intrinsic or vacancy defected graphene. However, doping Mn atoms on graphene significantly increases the adsorption energy and charge density between graphene and CO. After the adsorption of CO molecules, impurity band appears in the band structure near the Fermi level of graphene and the total density of states of the adsorption system shifts, which enhances the electrical conductivity of the system. Therefore, doping Mn atoms can greatly improve the adsorption performance of CO molecules on graphene and result in strong chemisorption. Results also show that the adsorption effect of CO on Mn-doped intrinsic graphene is stronger than on Mn-doped vacancy defected graphene. Mn-doped intrinsic graphene is more suitable for making high-performance CO gas sensors.