• 文献标题:   A triboelectric charge top-gated graphene transistor
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   QU WM, LIU WH, LI X, WANG XL
  • 作者关键词:   graphene, field effect transistor, triboelectricity
  • 出版物名称:   DIAMOND RELATED MATERIALS
  • ISSN:   0925-9635 EI 1879-0062
  • 通讯作者地址:   Xi An Jiao Tong Univ
  • 被引频次:   3
  • DOI:   10.1016/j.diamond.2016.11.009
  • 出版年:   2017

▎ 摘  要

A graphene channel with polymer polymethyl methacrylate (PMMA) or Polydimethylsiloxane (PDMS) passive layer were fabricated on a Si/SiO2 substrate. The gate-effect of triboelectric charges on a foreign stimulator and in situ generated triboelectric charges on the passive layer are tested by controlling the foreign stimulator (PDMS or Acrylic plate) touch or not with the passive layer. When the negatively charged PDMS (positively charged Acrylic) stimulator approach and leave the device without touching the passive layer, the channel resistance shows a pulsed decrease (increase) with amplitude less than 1%. When the stimulator has a temporary touch with the passive layer, the in situ generated triboelectric charges on the PMMA (PDMS) passive layer cause stepwise increase (decrease) of the channel resistance. The amplitude of the resistance change steps of the device with PMMA passive layer (2 mu m in thickness) is about one order larger for than that of the device with PDMS passive layer (about 60 mu m in thickness). The significant different response of the device depending on whether the stimulator touches or not with the passive layer suggests two possible operation models for the tribo-charge top-gated graphene channel. It may enable diverse design of tactile sensors and pressure sensors based on the tribotronic effect. (C) 2016 Elsevier B.V. All rights reserved.