▎ 摘　　要

Graphene field-effect transistors (GFETs) have now been around for more than a decade and their transfer characteristics extensively used for device characterization. Model parameters, such as low-field charge-carrier mobility and device contact/series resistance, have often been the main interest. However, not until recently have the methods for device characterization themselves been the focus of research publications. In this article, I report on a structured methodology for extracting and validating the extracted GFET model parameter values based on the physics of FETs in general and of GFETs in particular. During the extraction process, the GFET resistance is divided into two parts, a constant part and a gate-voltage-dependent part, where the constant part often has been believed to represent the series/contact resistance. However, part of it depends on the channel length and contains first-order information about mobility degradation. Finally, I show that the main influence of the quantum capacitance can be captured by an equivalent oxide thickness (EOT) replacing the insulator thickness.