• 文献标题:   Understanding noninvasive charge transfer doping of graphene: a comparative study
  • 文献类型:   Article
  • 作  者:   MEHTA AN, MU W, MURUGESAN M, JIAO Y, FU YF, HYLDGAARD P, LIU J
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS
  • ISSN:   0957-4522 EI 1573-482X
  • 通讯作者地址:   Chalmers Univ Technol
  • 被引频次:   1
  • DOI:   10.1007/s10854-017-8443-8
  • 出版年:   2018

▎ 摘  要

In this work, we systematically investigate and compare noninvasive doping of chemical vapor deposition graphene with three molecule dopants through spectroscopy and electrical conductivity techniques. Thionyl chloride shows the smallest improvement in conductivity with poor temporal and thermal stability and nitric acid induces the biggest sheet resistance reduction with modified stability. Molybdenum trioxide doping stands out, after thermal annealing, with both causing a significant sheet-resistance reduction and having superior temporal and thermal stability. These properties make it ideal for applications in advanced electronics. Theoretical studies based on the van der Waals density functional method suggest that cluster formation of molybdenum trioxide underpins the significant reduction in sheet resistance, and the stability, that arises after thermal annealing. Our comparative study clarifies charge transfer doping of graphene and brings understanding of the weak-interaction nature of such non-destructive doping of graphene. Our work also shows that we can use weak chemisorption to tailor the electronic properties of graphene, for example, to improve conductivity. This ability open up possibilities for further use of graphene in electronic interconnects, field effect transistors and other systems.