▎ 摘　　要

Metal-graphene (M-G) contact resistance (R-C) is studied through extensive experimental characterization, Monte-Carlo transport simulations and Density Functional Theory (DFT) analysis. We show that the back-gate voltage dependence of R-C cannot be explained only in terms of the resistance of the junction at the edge between contact and channel region. Experiments and DFT calculations indicate a consistent picture where both Ni and Au contacts have a M-G distance larger than the minimum energy distance, and where the M-G distance is crucial in determining the R-C value.