▎ 摘　　要

In the present study, a heterostructure based on Zn0.1Cd0.9S, N-doped graphene quantum dots (N-GQDs), and graphene was successfully prepared by a simple method. Various analyses are conducted to determine the structure, morphology, and materials performance of the synthesized composite. The results exhibit that the Zn0.1Cd0.9S/N-GQDs/graphene heterostructure presents excellent photoelectric performance with a high photocurrent of 4.43 x 10(-5) A/cm(2) and 3.43 x 10(-5) A/cm(2) under light irradiation of 365 nm and 405 nm, respectively. It demonstrates a two-fold photocurrent enhancement in comparison to blank Zn0.1Cd0.9S. This remarkable improvement is ascribed to a mechanism in which the N-GQDs act as photosensitizers, enhancing the absorption ability. Concurrently, graphene serves as a carrier mobility substrate, facilitating the separation of the photogenerated electron-hole pairs. The synergetic effect between Zn0.1Cd0.9S, the N-GQDs, and graphene enhances the photoelectric performance. The Zn0.1Cd0.9S/N-GQDs/graphene heterostructure provides a new route for the enhancement of the photoelectric performance of a semiconductor under UV-visible light.