▎ 摘　　要

Solid-state hole-transporting materials, including the traditional poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), and recently developed 4,4'-(naphthalene-2,6-diyl)bis(N,N-bis(4-methoxyphenyl)aniline) (NAP) and (E)-40,4000-(ethene-1,2-diyl)bis(N, N-bis(4-methoxyphenyl)-[100,1000-biphenyl]-4-amine) (BPV), have been applied as a hole-transporting interlayer (HTL) for graphene oxide/single-walled carbon nanotube-silicon (GOCNT/Si) heterojunction solar cells, forming a GOCNT/HTL/Si architecture. The influence of the thickness of the HTL has been studied. Anew AuCl3 doping process based on bath immersion has been developed and proved to improve the efficiency. With the AuCl3-doped GOCNT electrodes, the efficiency of GOCNT/PEDOT:PSS/Si, GOCNT/NAP/Si, and GOCNT/BPV/Si devices was improved to 12.05 +/- 0.21, 10.57 +/- 0.37, and 10.68 +/- 0.27% respectively. This study reveals that the addition of an HTL is able to dramatically minimise recombination at the heterojunction interface.