▎ 摘　　要

This letter presents a method of forming a top electrode on vertical silicon nanowires by using multilayer graphene as a supporting layer during metal deposition. We exploit graphene's unique material properties such as its impermeability to various gases and ions. An improved shallow trench isolation process is also presented to fabricate self-aligned silicon nanowire arrays for device integration. By this method, silicon nanowire bundle arrays with air gap structures are successfully fabricated using a top-down approach. This technique is expected to find use in many nanowire device applications. (C) 2012 The Japan Society of Applied Physics