• 文献标题:   Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)
  • 文献类型:   Article
  • 作  者:   LIN YR, WOLFF S, SCHADLICH P, HUTTER M, SOUBATCH S, LEE TL, TAUTZ FS, SEYLLER T, KUMPF C, BOCQUET FC
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1103/PhysRevB.106.155418
  • 出版年:   2022

▎ 摘  要

Using the normal incidence x-ray standing-wave technique as well as low-energy electron microscopy we have investigated the structure of quasifreestanding monolayer graphene (QFMLG) obtained by intercalation of ./ ./ antimony under the (6 3 x 6 3)R30 degrees reconstructed graphitized 6H-SiC(0001) surface, also known as zerothlayer graphene. We found that Sb intercalation decouples the QFMLG well from the substrate. The distance from the QFMLG to the Sb layer almost equals the expected van der Waals bonding distance of C and Sb. The Sb intercalation layer itself is monoatomic, flat, and located much closer to the substrate, at almost the distance of a covalent Sb-Si bond length. All data is consistent with Sb located on top of the uppermost Si atoms of the SiC bulk.