▎ 摘　　要

We calculate the classic Hall conductivity and mobility of the undoped and doped (or at the gate voltage) graphene as a function of temperature, magnetic field, and carrier concentration. Carrier collisions with defects and acoustic phonons are taken into account. The Hall resistivity varies almost linearly with temperature below the Debye temperature. The magnetic-field dependence of resistivity and mobility is anomalous in weak fields at low gate voltage: there is a square-root field contribution in the resistivity and the Hall mobility diverges logarithmically with the field.