▎ 摘　　要

Tuning of the electrical properties of graphene via photo excitation of a heteroassembled material has started applications. Actually photoinduced carrier :doping from the hexagonal boron nitride (h-BN) substrate greatly modulated the transport property of the top layer graphene, showing promising potential for this approach. However, for practical applications, the large scale production of this two-dimensional heterostructure is needed. Here, a superlattice film constructed from reduced graphene oxide (rGO) and photoactive titania nanosheets (Ti0.87O20.52-) was employed as a channel to construct a field effect transistor (FET) device, and its UV light response on the electrical transport property was examined. The UV light illumination induced significant improvement of the, electrical conductance by, similar to 7 times on the basis Of simultaneous enhancements,of the,electron carrier,concentration and its Mobility in rGO. Furthermore, the polarity of the FET response changed from ambipolar to n-type unipolar. Such modulated properties persisted in vacuum even after the UV light was turned off. These interesting behaviors may be explained in terms of photomodulation effects from Ti0.87O20.52- nanosheets. The photoexcited electrons in Ti0.87O20.52- are injected into rGO to increase the electron carrier concentration as high as 7.6 x 10(13) cm(-2). On the other hand, the holes are likely trapped in the Ti0.87O20.52- nanosheets. These photocarriers undergo reduction and oxidation of oxygen and water molecules adsorbed in the film, respectively, which act as carrier scattering centers, contributing to the enhancement of the carder mobility. Since the film likely contains more water molecules than oxygen, upon extinction of UV light, a major portion of electrons (similar to 80% of the concentration at the UV off) survives in rGO, showing the highly enhanced conductance for days. This surpassing photomodulated FET response and its persistency observed in the present superlattice system of rGO/Ti0.87O20.52- are noteworthy compared with previous studies such as the device with a heteroassembly of graphene/h-BN.