• 文献标题:   Imaging Andreev Reflection in Graphene
  • 文献类型:   Article
  • 作  者:   BHANDARI S, LEE GH, WATANABE K, TANIGUCHI T, KIM P, WESTERVELT RM
  • 作者关键词:   graphene, andreev reflection, ballistic transport, scanning gate microscope
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Harvard Univ
  • 被引频次:   2
  • DOI:   10.1021/acs.nanolett.0c00903
  • 出版年:   2020

▎ 摘  要

Coherent charge transport along ballistic paths can be introduced into graphene by Andreev reflection, for which an electron reflects from a superconducting contact as a hole, while a Cooper pair is transmitted. We use liquid-helium cooled scanning gate microscopy (SGM) to image Andreev reflection in graphene in the magnetic focusing regime, where carriers move along cyclotron orbits between contacts. Images of flow are obtained by deflecting carrier paths and displaying the resulting change in conductance. When electrons enter the superconductor, Andreev-reflected holes leave for the collecting contact. To test the results, we destroy Andreev reflection with a large current and by heating above the critical temperature. In both cases, the reflected carriers change from holes to electrons.