▎ 摘　　要

For the fabrication of high performance graphene devices, the transfer process with clean surface without too many PMMA residues is of paramount importance in that it is has great impact on graphene interface. In this paper, a graphene heat-free-transfer process is proposed for the first time in order to get a decently clean surface. The evaluation of PMMA residues as a function of baking temperature is carried out. Experimental results clearly show that baking at higher temperature leads to more PMMA residues on graphene. In order to reduce these residues on graphene, a heat-free-transfer process is presented, in which the baking step is skipped. Thanks to both the step of anisole recoating and the abolishment of DI water rinsing, this heat-free-transfer overcomes the crack issue occurred to transferred graphene. It has been proven that, by adopting this heat-free-transfer process, the PMMA residues are notably reduced and the surface roughness of transferred graphene is improved, which in turn improves the interface of graphene. This improved interface is ought to be beneficial for the fabrication of high performance graphene devices. (C) 2015 The Electrochemical Society. All rights reserved.