▎ 摘　　要

Modulation of semiconductor halfmetal metal transition in the antiferromagnetic (AF) ordering of bilayer zigzag graphene nanoribbons (BZGNRs) on hexagonal boron nitride (h-BN) heterostructure using the external force field F-ext and transverse electric fields E-ext (in the presence of interaction with the substrate) was performed within the framework of the density functional theory (DFT). We established critical values of E-ext and interlayer distance in the bilayer providing for semiconductor-halfmetal-metal transition in one of electron spin configurations. Our calculations also show that the energy gap E-g in the AF-BZGNR/h-BN(0001) heterostructure can be controlled in a wide range of the F-ext and E-ext. This makes the AF-8-ZGNR/h-BN(00 01) heterostructure being potentially promising for application in spintronic devices. (C) 2015 Elsevier B.V. All rights reserved.