▎ 摘　　要

Pressure sensing is one of the key functions for smart electronics. Considerably more effort is required to achieve the fabrication of pressure sensors that can imitate and overcome the sophisticated pressure sensing characteristics in nature and industry, especially in the innovation of materials and structures. Almost all of the pressure sensors reported until now have a high sensitivity at a low-pressure detection limit (< 10 kPa). While the exploration of a pressure sensor with a high sensitivity and a high responsivity at a high-pressure is challenging, it is required for next generation smart electronics. Here, we report an exotic heterostructure pressure sensor based on ZnO/chlorine radical-trap doped bilayer graphene (ZGClG) as an ideal channel for pressure sensors. Using this ZGClG as the channel, this study shows the possibility of forming a pressure sensor with a high sensitivity (0.19 kPa(-1)) and a high responsivity (0.575 s) at V = 1 V on glass substrate. Further, the pressure detection limit of this device was as high as 98 kPa. The investigation of the sensing mechanism under pressure has revealed that the significant improved sensing effect is related to the heavy p-type chlorine trap doping in the channel graphene with chlorine radicals without damaging the graphene. This work indicates that the ZGClG channel used for the pressure sensing device could also provide a simple and essential sensing platform for chemical-, medical-, and biological-sensing for future smart electronics.