• 文献标题:   Precision quantum Hall resistance measurement on epitaxial graphene device in low magnetic field
  • 文献类型:   Article
  • 作  者:   SATRAPINSKI A, NOVIKOV S, LEBEDEVA N
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   MIKES
  • 被引频次:   17
  • DOI:   10.1063/1.4826641
  • 出版年:   2013

▎ 摘  要

Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at temperature T = 1.5K and at magnetic fields B from 8 T down to 2.5 T, that is much lower than typically used in precision QHR measurement. QHR was measured using cryogenic current comparator resistance bridge with relatively large biasing current I-sd = 41 mu A to reduce measurement uncertainty. The results showed that at B = 8 T, the relative deviation of Hall resistance from the expected quantized value h/2e(2) is within experimental uncertainty of 3.5 parts in 10(8) and remained below 0.35 parts per million (ppm) down to B = 3T. (C) 2013 AIP Publishing LLC.