▎ 摘　　要

Compared with twisted bilayer graphene, twisted double bilayer graphene (TDBG) provides another important platform to realize the moire flat bands. In this paper, we first calculate the valley Chern number phase diagram of TDBG in the parameter space spanned by the twist angle and the interlayer electric potential. To include the effects of interactions, we then phenomenologically introduce the spin-splitting and valley-splitting. We find that when the valley splitting is larger than the bandwidth of the first conduction band so that a gap is opened and the spin splitting is relatively weak, the orbital Chern insulator emerges at half-filling, associated with a large orbital magnetization (OM). Further calculations suggest that there is no sign reversal of the OM when the Fermi energy goes from the bottom to the top of the half-filling gap, as the OM remains negative in both AB-AB stacking and AB-BA stacking. The implications of our results for the ongoing experiments are also discussed.