• 文献标题:   Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene
  • 文献类型:   Article
  • 作  者:   ZHANG GB, ZHAO M, YAN CL, SUN B, WU ZG, CHANG HD, JIN Z, SUN J, LIU HG
  • 作者关键词:   algan/gan, highelectronmobility transistors hemts, graphene, thermal management
  • 出版物名称:   JOURNAL OF NANOSCIENCE NANOTECHNOLOGY
  • ISSN:   1533-4880 EI 1533-4899
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   0
  • DOI:   10.1166/jnn.2018.16080
  • 出版年:   2018

▎ 摘  要

A thermal analysis of AlGaN/GaN high electron mobility transistors (HEMTs) with Graphene is investigated using Silvaco and Finite Element Method. Two thermal management solutions are adopted; first of all, graphene is used as dissipation material between SiC substrate and GaN buffer layer to reduce thermal boundary resistance of the device. At the same time, graphene is also used as a thermal spread material on the top of the source contacts to reduce thermal resistance of the device. The thermal analysis results show that the temperature rise of device adopting graphene decreases by 46.5% in transistors operating at 13.86 W/mm. Meanwhile, the thermal resistance of GaN HEMTs with graphene is 6.8 K/W, which is much lower than the device without graphene, which is 18.5 K/W. The thermal management solutions are useful for integration of large-scale graphene into practical devices for effective heat spreading in AlGaN/GaN HEMT.