▎ 摘　　要

We show that Andreev reflection in a junction between ferromagnetic (F) and superconducting (S) graphene regions is fundamentally different from the common FS junctions. For a weakly doped F graphene with an exchange field h larger than its Fermi energy E-F, Andreev reflection of massless Dirac fermions is associated with a Klein tunneling through an exchange field p-n barrier between two spin-split conduction and valence subbands. We find that this Andreev-Klein process results in an enhancement of the subgap conductance of a graphene FS junction by h up to the point at which the conductance at low voltages eV