• 文献标题:   Nitrogen doping effects on the structure of graphene
  • 文献类型:   Article
  • 作  者:   GENG DS, YANG SL, ZHANG Y, YANG JL, LIU J, LI RY, SHAM TK, SUN XL, YE SY, KNIGHTS S
  • 作者关键词:   graphene, nitrogen doping, defect, structure
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332
  • 通讯作者地址:   Univ Western Ontario
  • 被引频次:   273
  • DOI:   10.1016/j.apsusc.2011.05.131
  • 出版年:   2011

▎ 摘  要

Graphene and nitrogen doped graphene have been prepared by modified Hummers' method and the following ammonia heat-treatment process, respectively. The effects of N-doping on the structure of graphene have been systematically investigated by various characterization techniques. SEM, TEM, BET, Raman and XRD analysis were used to distinguish the difference of the microstructures; and FT-IR, XPS, especially XANES were performed to elucidate the bonding information such as C-N. The effect of nitrogen doping on the structure of graphene has been obtained. More defects are present on nitrogen doped graphene as elucidated by BET, XRD, Raman, and XANES characterizations. XANES analysis also indicates that the N-doping decreases the surface oxygen-containing groups. (C) 2011 Published by Elsevier B. V.