▎ 摘　　要

Single-layer graphene sheets have been synthesized by using chemical vapor deposition, and subsequently doped with AgNO3 at various doping concentrations. (n(D)) from 5 to 50 mM. Atomic force microscopy and field emission scanning electron microscopy images reveal the formation of similar to 10-100 nm Ag particles on the graphene surface after doping. The type of n doping is confirmed by analyzing the n(D)-dependent behaviors of Raman scattering and the work function of the doped graphene films. The sheet resistance monotonically decreases to similar to 173 Omega/sq with the increase of nD to 50 mM, and the transmittance is reduced by only about 3% for the highest nD. At nD D 10 mM optimized doped graphene layers with a sheet resistance of 202 Omega/sq and a transmittance of 96% are obtained, resulting in a maximum DC conductivity/optical conductivity ratio. (sigma(DC)= sigma(OP)) of similar to 45: 5, much larger than the minimum industry standard (sigma(DC)= sigma(OP) similar to 35) for transparent conductive electrodes.