▎ 摘　　要

To the best of our knowledge, the previously reported graphene fabricated using catalytic chemical vapor deposition techniques contained a high defect density, which will hinder its opto-electronic properties. In this work, the effects of two crucial parameters, namely deposition time and hydrogen flow rate on the growth of graphene using a hot-filament thermal chemical vapor deposition technique were systematically studied. Fabrications were conducted at substrate and filament temperatures of 1000 degrees C and 1750 degrees C, respectively. Very low I-D/I-G ratios (<< 0.1) were obtained for all the samples, which reflected the formation of high-quality graphene deposited on Cu foils. A quasi-static equilibrium copper vapor inside an alumina tube was found to be an important factor to obtain a low defect density graphene. A growth mechanism was then proposed, where the cuprous oxide (Cu2O) acted as a nucleation site for graphene growth. (C) 2015 Elsevier Ltd. All rights reserved.