• 文献标题:   Quantum Well Based on Graphene and Narrow-Gap Semiconductors
  • 文献类型:   Article
  • 作  者:   RATNIKOV PV, SILIN AP
  • 作者关键词:  
  • 出版物名称:   BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
  • ISSN:   1068-3356
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.3103/S106833560902002X
  • 出版年:   2009

▎ 摘  要

The energy spectrum of a planar quantum well formed by two narrow-gap semiconductor strips with a graphene strip inserted between them was considered. It was shown that the gaplessmode arises only in the case of inverted narrow-gap semiconductors. Taking into account the graphene specificity, the spin splitting of the energy spectrum of the asymmetric quantum well was calculated. Interface states and optical transitions were studied. It was shown that optical transitions are possible only with parity conservation.