▎ 摘　　要

The objective of this study was to obtain high stability of switching behavior by employing hybrid Zinc Oxide-Graphene (ZnO-G) structure in memristor device. ZnO was grown on a glass substrate using thermal chemical vapor deposition (TCVD) at different substrate temperature of 350 degrees C, 450 degrees C and 550 degrees C. Graphene in water solution was transformed on ZnO thin film using water bath at 90 degrees C. Raman spectra and FESEM images showed that the thin film exhibited multilayers graphene on ZnO surface has been formed. The multilayer graphene is highly transparent as the ZnO surface morphology can be observed underneath the graphene layer. Switching cycle was found consistent even after several cycles. Due to the limited oxygen ion mobility present in the oxide bulk, the switching cycle of hybrid ZnO-G devices can be repeated many times without degrade which showed more stable properties than those of ZnO devices. From I-V characteristic, it was found that high serial resistance of graphene is contributed to the reduced current consumption of Graphene-based devices to 200 mu A. The finding showed that, hybrid ZnO-G structure has been successfully fabricated on glass substrate with stable switching properties compared to pristine ZnO memristive device.