• 文献标题:   UV Illumination as a Method to Improve the Performance of Gas Sensors Based on Graphene Field-Effect Transistors
  • 文献类型:   Article
  • 作  者:   PARK J, RAUTELA R, ALZATECARVAJAL N, SCARFE S, SCARFE L, ALARIE L, LUICANMAYER A, MENARD JM
  • 作者关键词:   graphene gas sensor, graphene fieldeffect transistor, uv, chemical warfare agent detection, sensing mechanism, 2d material
  • 出版物名称:   ACS SENSORS
  • ISSN:   2379-3694
  • 通讯作者地址:  
  • 被引频次:   8
  • DOI:   10.1021/acssensors.1c01783
  • 出版年:   2021

▎ 摘  要

The ability to detect and recognize airborne chemical species is essential to enable applications in security, health, and environmental monitoring. Here, we report a sensing platform based on graphene field-effect transistor (GFET) devices combined with optical illumination for the detection of volatile compounds. We compare the change in resistance of GFET sensors upon exposure to analytes such as ethanol, dimethyl methylphosphonate (DMMP), and water vapors with and without the presence of a local illuminating ultraviolet (UV) light-emitting diode (LED). Our results show that UV illumination acts as a control knob for the electronic transport properties of graphene, increasing the device's response to ethanol, water, and DMMP, up to a factor of 54, and enabling ppb-level detection of DMMP at 800 ppb without chemical functionalization of the graphene layer. The sensing response can be optimized to reveal an analyte-specific interplay between the induced changes in carrier concentration and mobility of the GFET. These findings provide a pathway to enhancing the sensitivity of GFET sensors and a differentiation channel to improve their selectivity.