• 文献标题:   Large tunable intrinsic gap in rhombohedral-stacked tetralayer graphene at half filling
  • 文献类型:   Article
  • 作  者:   MYHRO K, CHE S, SHI Y, LEE Y, THILAHAR K, BLEICH K, SMIRNOV D, LAU CN
  • 作者关键词:   tetralayer graphene, electronic interaction, spontaneous symmetry breaking, layer antiferromagnet, half filling
  • 出版物名称:   2D MATERIALS
  • ISSN:   2053-1583
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   3
  • DOI:   10.1088/2053-1583/aad2f2
  • 出版年:   2018

▎ 摘  要

At half filling, the very flat energy bands in rhombohedral-stacked tetralayer graphene are unstable to electronic interactions, giving rise to electronic states with spontaneous broken symmetries. Using transport measurements on suspended dual-gated devices, we observe an insulating ground state with a large interaction-induced transport gap up to 80 meV, which can be enhanced by a perpendicular magnetic field, and suppressed by an interlayer potential, carrier density, or a critical temperature of similar to 40 K. This insulating gapped state is proposed to be a layer antiferromagnet with broken time reversal symmetry.