▎ 摘　　要

We have fabricated epitaxial side-gate graphene field-effect transistors (FETs) with high transconductance. A side-gate graphene FET with 55 x 60 nm(2) active channel dimensions and a lateral gate-channel separation of 95 nm showing a high transconductance of 590 mS/mm is presented. An estimation of the electrostatic gate-channel capacitance of epitaxial side-gate graphene FETs shows that it is in the same order as the electrostatic gate capacitance of common top-gate graphene MOSFETs justifying the high transconductances of our devices. The results of the present paper demonstrate the potential of the side-gate architecture for graphene transistors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748112]